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The IXGA48N60B3-TRL is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS using silicon technology. It belongs to the GenX3 product family and utilizes a D2PAK-3 (TO-263-3) surface-mount package. The device features a maximum collector-emitter voltage of 600 V and a continuous collector current of 48 A at 25°C, with a peak pulsed current rating of 280 A. Key electrical parameters include a collector-emitter saturation voltage of 1.8 V, a gate-emitter voltage range of -20 V to +20 V, and a power dissipation capacity of 300 W. It operates within a temperature range of -55°C to +150°C.
Verify the specific ordering suffix TRL to confirm reel packaging and quantity specifications. Ensure compatibility with standard SMD reflow soldering profiles for TO-263 packages. Cross-reference datasheet revisions to confirm RoHS compliance status and any recent material changes. Confirm that the supplier provides official traceability documentation for semiconductor components.
Select this component when a surface-mount IGBT with 600V blocking capability is required. The 48A continuous current rating suits moderate power applications where PCB space is limited. Consider the 1.8V saturation voltage for conduction loss calculations. Evaluate thermal resistance requirements against the 300W dissipation limit in the final enclosure design.
This part is part of IXYS' GenX3 series of IGBTs, which are engineered for improved switching characteristics compared to previous generations. The TO-263-3 package allows for direct mounting on printed circuit boards, facilitating automated assembly processes. It serves as a discrete solution for power conversion stages in industrial and consumer electronics.
Direct pin-compatible replacements within the same GenX3 family should be verified via official cross-reference lists. Ensure substitute parts match the 600V rating and similar saturation voltage characteristics to maintain circuit performance without redesign.