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The IXGA4N100 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a maximum collector-emitter voltage of 1 kV and a continuous collector current rating of 8 A. The device utilizes Silicon technology and is housed in a TO-263AA (D2PAK-3) surface-mount package. Key electrical parameters include a collector-emitter saturation voltage of 2.7 V and a gate-emitter voltage range of -20 V to +20 V. It operates within a temperature range of -55°C to +150°C.
Verify component authenticity through authorized IXYS distributors or certified partners. Confirm RoHS compliance status prior to integration. Ensure storage conditions maintain moisture sensitivity levels appropriate for surface-mount devices. Validate datasheet revisions against manufacturing dates to ensure parameter accuracy.
Select the IXGA4N100 for circuits requiring 1 kV blocking capability with moderate current handling. The TO-263AA package suits designs prioritizing PCB space efficiency over through-hole mounting. Evaluate thermal management requirements given the 40 W power dissipation rating. Consider gate drive compatibility with the specified voltage limits.
This component belongs to the IXYS IXGA series of IGBTs, designed for medium-power switching applications. The series offers various current ratings within the same voltage class, allowing designers to scale performance while maintaining consistent packaging and interface characteristics across different product variants.
Public confirmed substitute part numbers are not available in the provided documentation.