IXGA7N60B

Overview

The IXGA7N60B is a single silicon Insulated Gate Bipolar Transistor (IGBT) from the IXYS IXGA series. It features a TO-263 package with through-hole mounting capability. The device supports a maximum collector-emitter voltage of 600 V and a continuous collector current of 14 A at 25°C. Maximum power dissipation is rated at 54 W, with an operating temperature range spanning -55°C to +150°C.

Feature Summary

• Utilizes standard input type configuration for gate control
• Designed for medium-speed switching applications
• Single IGBT configuration within a compact surface-mount compatible footprint

Applications

• Motor drive inverters
• Switch-mode power supplies
• Induction heating systems

Procurement Notes

Verify component authenticity against manufacturer specifications before integration. Confirm RoHS3 compliance status for environmental regulations. Ensure thermal management design accommodates the 54 W dissipation rating. Validate pinout compatibility with existing PCB layouts. Check for obsolescence notices or lifecycle changes prior to final procurement decisions.

Selection Notes

Select this component when a 600 V blocking capability and 14 A continuous current are required in a TO-263 form factor. Consider the 150°C junction temperature limit for high-thermal environments. Evaluate switching speed requirements against typical IGBT performance characteristics. Compare power dissipation limits with available heatsinking solutions. Ensure gate drive voltage levels align with standard IGBT thresholds.

Part Context

This part belongs to the IXYS IXGA family of 600 V IGBTs. It shares the TO-263 package style with other variants like IXGA48N60A3 but differs significantly in current handling due to its lower 14 A rating. The series targets cost-effective solutions for moderate power applications requiring reliable switching performance.

Replacement Considerations

No direct public substitute part numbers are confirmed in the provided documentation.