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The IXGC12N60CD1 is a HiPerFAST IGBT in an ISOPLUS247 package. It features a silicon chip on a direct-copper-bond substrate for high power dissipation and electrical isolation. Maximum ratings include a collector-emitter voltage of 600 V, continuous collector current of 5 A at 25°C, and power dissipation of 85 W. The device operates within a junction temperature range of -40 to +150°C. Key electrical characteristics include a saturation voltage of 2.7 V max at 12 A, gate charge of 32 nC, and low collector-to-tab capacitance below 35 pF.
Verify component authenticity through authorized channels. Confirm datasheet revision status as specifications may change. Ensure thermal management aligns with the specified RthJC values. Check for RoHS compliance documentation if required by local regulations.
Select this component for designs requiring galvanic isolation between the mounting surface and circuit ground. The ISOPLUS247 package facilitates heat sinking without additional insulators. Consider the integrated FRED diode for applications needing synchronous rectification or freewheeling capabilities.
This part belongs to the IXGC series of HiPerFAST IGBTs manufactured by IXYS. It utilizes the ISOPLUS220/ISOPLUS247 family of packages designed for high-voltage applications. The 'CD1' suffix indicates the inclusion of an integrated fast recovery epitaxial diode.
Refer to the IXGA12N60CD1 data sheet for characteristic curve comparisons. Verify pinout compatibility and thermal resistance parameters when substituting similar 600V IGBTs.
The maximum isolation voltage is 2500 V.
Yes, the CD1 variant includes an integrated Reverse Diode (FRED).
The typical turn-off time is 55 ns under standard test conditions.