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Product Detailed Parameters
- Description：IGBT NPT 2500V 30A ISOPLUS I4PAC
- Series：-
- Mfr：IXYS
- Package：Tube
- IGBT Type：NPT
- Voltage - Collector Emitter Breakdown (Max)：2500 V
- Current - Collector (Ic) (Max)：30 A
- Current - Collector Pulsed (Icm)：200 A
- Vce(on) (Max) @ Vge, Ic：5.2V @ 15V, 75A
- Power - Max：114 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：75 nC
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：i4-Pac™-5 (3 Leads)
- Supplier Device Package：ISOPLUS i4-PAC™
- Grade：-
- Qualification：-
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Overview
The IXGF25N250 is a high-voltage silicon Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a single configuration housed in a TO-247AD-3 through-hole package. The device supports a maximum collector-emitter voltage of 2.5 kV and delivers a continuous collector current of 25 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 3.1 V, a gate-emitter voltage range of -20 V to +20 V, and a power dissipation capacity of 150 W. The component operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- High Voltage Capability: Designed for applications requiring robust performance at 2.5 kV blocking voltages.
- Standard IGBT Technology: Utilizes standard silicon technology for reliable switching in high-power circuits.
- Through-Hole Mounting: Compatible with traditional PCB mounting methods via the TO-247AD-3 package.
Applications
- High-voltage DC-DC converters
- Industrial motor drives
- Uninterruptible power supplies (UPS)
Procurement Notes
Verify the specific datasheet revision and RoHS compliance status directly with the manufacturer or authorized distributors before procurement. Confirm that the TO-247AD-3 package dimensions match the target PCB footprint. Ensure thermal management solutions are adequate for the specified 150 W power dissipation rating under actual operating conditions.
Selection Notes
Select this component when a 2.5 kV rated IGBT with moderate current handling is required. Compare the 3.1 V saturation voltage against alternative devices to evaluate conduction losses. Consider the thermal resistance characteristics of the TO-247AD-3 package for heat sink selection. Verify compatibility with standard gate drive voltages within the +/- 20 V range.
Part Context
This part belongs to IXYS's portfolio of high-voltage discrete semiconductors. It serves as a solution for medium-to-high power conversion systems where reliability at elevated voltages is critical. The TO-247AD-3 package provides a balance between current capacity and thermal performance for through-hole assembly processes.
Replacement Considerations
No official substitute part numbers are documented for this specific model. When evaluating alternatives, ensure the replacement matches the 2.5 kV voltage rating, 25 A current capability, and TO-247AD-3 package outline. Verify that saturation voltage and switching characteristics meet the original design requirements.
