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The IXGF32N170 is a high-voltage N-channel Power MOSFET manufactured by IXYS. It features a 1700 V drain-source breakdown voltage and supports a continuous drain current of 32 A at 25°C case temperature. The device utilizes an NPT (Non-Punch-Through) structure for rugged operation. Key electrical parameters include a maximum gate-source voltage of ±20 V, a typical gate charge of 140 nC, and a power dissipation rating of 250 W. The component is housed in a TO-268AA surface-mount package and operates within a junction temperature range of -55°C to +150°C.
Verify the specific suffix and revision level against the manufacturer's latest datasheet to ensure compatibility with design requirements. Confirm RoHS compliance status and REACH SVHC declarations prior to procurement. Check for active production status or obsolescence notices from IXYS to avoid supply chain disruptions during long-term projects.
Select this component for high-voltage switching applications requiring robust performance. Ensure the thermal management solution can handle the 250 W power dissipation in the TO-268AA package. Verify that the gate drive circuitry provides appropriate voltage levels within the ±20 V limit and accounts for the 140 nC gate charge for optimal switching speeds.
This part belongs to the IXYS high-voltage IGBT and MOSFET portfolio, designed for industrial power conversion. It shares functional similarities with other high-voltage discrete devices in the IXGX series but offers distinct MOSFET characteristics. The TO-268AA package facilitates surface-mount assembly for compact power electronics designs.
Direct substitutes may include parts from the IXGX32N170H1 series if pinout and electrical characteristics align. Verify package compatibility and thermal resistance values before substitution.