IXGH10N100AU1

$3.46

Description：IGBT 1000V 20A TO-247AD
Series：-

SKU:db17ee2b7375 Category: Single IGBTs Brand: IXYS

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Product introduction

Product Detailed Parameters

Description：IGBT 1000V 20A TO-247AD
Series：-
Mfr：IXYS
Package：Tube
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：1000 V
Current - Collector (Ic) (Max)：20 A
Current - Collector Pulsed (Icm)：40 A
Vce(on) (Max) @ Vge, Ic：4V @ 15V, 10A
Power - Max：100 W
Switching Energy：2mJ (off)
Input Type：Standard
Gate Charge：52 nC
Td (on/off) @ 25°C：100ns/550ns
Test Condition：800V, 10A, 150Ohm, 15V
Reverse Recovery Time (trr)：60 ns
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247AD
Grade：-
Qualification：-

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IXGH10N100AU1

Overview

The IXGH10N100AU1 is a silicon Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It belongs to the IXGH10N100 series and features a TO-247AD-3 through-hole package. The device is rated for a collector-emitter voltage of 1000 V and a continuous collector current of 10 A at 25°C. It has a maximum gate-emitter voltage of ±20 V and operates within a junction temperature range of -55°C to +150°C.

Feature Summary

High-voltage capability with 1000 V collector-emitter breakdown
Robust thermal management via TO-247AD-3 flange mount package
Designed for high-speed switching applications

Applications

Industrial motor drives
Switch-mode power supplies
Inverter circuits

Procurement Notes

Verify component authenticity against manufacturer specifications due to potential availability constraints. Confirm that the specific suffix AU1 matches the required pinout and electrical characteristics for your design, as variations may exist within the product family. Check for end-of-life status or obsolescence notices from the original equipment manufacturer before finalizing procurement plans.

Selection Notes

Select this component when a 1000 V IGBT with 10 A continuous current rating is required in a TO-247AD-3 package. Ensure the application supports the specified thermal resistance and junction temperature limits. Compare switching losses and saturation voltage against alternative devices if efficiency is critical.

Part Context

This part is part of the IXGH10N100 series of low VCE(sat) IGBTs from IXYS. It shares the same voltage and current ratings as the standard IXGH10N100A but may differ in specific manufacturing revisions or packaging details indicated by the AU1 suffix.