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Product Detailed Parameters
- Description：IGBT 1200V 30A TO-247AD
- Series：-
- Mfr：IXYS
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：30 A
- Current - Collector Pulsed (Icm)：60 A
- Vce(on) (Max) @ Vge, Ic：3.8V @ 15V, 15A
- Power - Max：150 W
- Switching Energy：1.05mJ (off)
- Input Type：Standard
- Gate Charge：69 nC
- Td (on/off) @ 25°C：25ns/150ns
- Test Condition：960V, 15A, 10Ohm, 15V
- Reverse Recovery Time (trr)：40 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247AD
- Grade：-
- Qualification：-
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Overview
The IXGH15N120CD1 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a maximum collector-emitter voltage of 1200V and a continuous collector current of 30A at 25°C. The device has a maximum power dissipation of 200W and operates within a temperature range of -55°C to +150°C. Packaged in a TO-247AD-3 through-hole housing, it includes an integrated anti-parallel diode.
Feature Summary
- Integrates a high-speed IGBT with an anti-parallel diode for efficient switching
- Features low saturation voltage characteristics for reduced conduction losses
- Utilizes GenX3 technology for robust performance in hard-switching applications
Applications
- High-frequency motor drives
- Switch-mode power supplies
- Induction heating systems
Procurement Notes
Verify the specific ordering suffix against official IXYS documentation to confirm pin configuration and thermal interface specifications. Ensure that the procurement channel provides valid traceability records. Cross-reference the manufacturer part number with authorized distributor catalogs to prevent counterfeit components. Confirm RoHS compliance status prior to finalizing orders.
Selection Notes
Select this component for designs requiring high-voltage isolation and fast switching speeds. Consider the thermal resistance of the TO-247AD package when designing heat sinks. Evaluate the gate charge requirements against the driving circuit capabilities. Compare the saturation voltage against system efficiency targets.
Part Context
This device belongs to the IXYS High Voltage IGBT series, utilizing GenX3 technology. It is designed for demanding power electronics applications where reliability and speed are critical. The product line supports various industrial and commercial power conversion needs.
Replacement Considerations
Consult official IXYS substitution guides for compatible alternatives. Verify electrical parameters such as Vceo and Ic match the original design requirements. Check package compatibility for direct board replacement.
