IXGH16N170AH1

Overview

The IXGH16N170AH1 is a high-voltage N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a TO-247AD-3 through-hole package and operates with a maximum collector-emitter voltage of 1700 V. The device supports a continuous collector current of 16 A at 25°C, with a peak pulse current rating of 40 A. Key electrical parameters include a gate-emitter voltage range of ±20 V, a maximum power dissipation of 190 W, and a junction temperature range from -55°C to +150°C. The component utilizes silicon technology and is designed for robust switching applications requiring high voltage isolation.

Feature Summary

• High voltage blocking capability rated at 1700 V for demanding power environments
• Robust thermal management supporting up to 190 W power dissipation in standard packages
• Wide operating temperature range extending from -55°C to +150°C for reliability
• Standard single configuration compatible with common gate drive circuits

Applications

• Industrial motor drives and inverters
• Uninterruptible power supply (UPS) systems
• Induction heating equipment
• Welding power supplies

Procurement Notes

Verify the specific suffix 'H1' against official IXYS documentation to confirm pinout and thermal characteristics, as variations exist within the series. Ensure the procurement source provides valid RoHS compliance data. Cross-reference the manufacturer part number directly with the datasheet revision history to avoid obsolete or superseded versions. Confirm that the supplier offers genuine components with traceable origin records to prevent counterfeit risks in critical power electronics assemblies.

Selection Notes

Select this component when a 1700 V rating is required alongside moderate current handling in a through-hole format. Compare the 16 A continuous current limit against the application's RMS load requirements. Evaluate the thermal resistance of the TO-247AD package against the expected heat sink capabilities. Consider the switching speed characteristics relative to the system's frequency constraints and electromagnetic interference requirements.

Part Context

This IGBT belongs to the IXYS high-voltage discrete semiconductor portfolio, specifically designed for medium-power industrial applications. It complements other devices in the 1700 V class, offering a balance between voltage withstand capability and current capacity. The TO-247AD package is a standard industry form factor, facilitating integration into existing PCB layouts and module designs commonly used in power conversion hardware.

Replacement Considerations

Direct substitutes may include the IXGT16N170A for surface-mount needs, though package differences apply. Verify electrical equivalence for any cross-brand replacements, ensuring matching voltage, current, and saturation voltage ratings. Consult IXYS product change notices for potential obsolescence or parameter updates affecting direct interchangeability.