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Product Detailed Parameters
- Description：IGBT 1000V 34A TO-247AD
- Series：-
- Mfr：IXYS
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：1000 V
- Current - Collector (Ic) (Max)：34 A
- Current - Collector Pulsed (Icm)：68 A
- Vce(on) (Max) @ Vge, Ic：3.5V @ 15V, 17A
- Power - Max：150 W
- Switching Energy：3mJ (off)
- Input Type：Standard
- Gate Charge：100 nC
- Td (on/off) @ 25°C：100ns/500ns
- Test Condition：800V, 17A, 82Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247AD
- Grade：-
- Qualification：-
Download product information
Overview
The IXYS IXGH17N100 is a second-generation HDMOSTM Insulated Gate Bipolar Transistor featuring a low saturation voltage for reduced conduction losses. It operates with a collector-emitter breakdown voltage of 1000 V and supports a continuous collector current of 34 A at 25°C. The device utilizes a TO-247AD flange mount package, ensuring high power density and ease of mounting via an isolated screw hole. It is designed for high-speed switching applications with guaranteed voltage ratings at elevated temperatures up to 125°C.
Feature Summary
- Second-generation HDMOSTM process technology
- Low VCE(sat) for minimized on-state conduction losses
- High current handling capability
- Isolated mounting screw hole in TO-247 package
Applications
- AC motor speed control
- DC servo and robot drives
- Uninterruptible power supplies (UPS)
- Switch-mode and resonant-mode power supplies
Procurement Notes
Verify the specific suffix designation against the manufacturer's official datasheet to confirm pinout configuration and integrated diode presence. Ensure thermal management solutions align with the TO-247AD flange mount requirements. Confirm RoHS compliance status through the latest product change notices or distributor documentation prior to procurement.
Selection Notes
Select this component for designs requiring high-voltage isolation with efficient conduction characteristics. The TO-247AD package facilitates robust mechanical mounting and heat dissipation for medium-power industrial applications. Evaluate thermal resistance parameters relative to the specific heatsink design to ensure junction temperature limits are not exceeded during operation.
Part Context
This IGBT belongs to the IXYS high-performance discrete semiconductor portfolio, utilizing advanced planar trench gate technology. It is engineered for reliability in demanding power conversion environments. The device represents a balance between switching speed and conduction efficiency, suitable for modern industrial inverter architectures.
Replacement Considerations
Cross-reference with IXGH17N100A for potential minor specification variations. Verify electrical compatibility with IXGH17N100U1 if an integrated anti-parallel diode is required for the circuit topology.
