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Product Detailed Parameters
- Description：IGBT PT 1200V 40A TO-247AD
- Series：-
- Mfr：IXYS
- Package：Tube
- IGBT Type：PT
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：40 A
- Current - Collector Pulsed (Icm)：80 A
- Vce(on) (Max) @ Vge, Ic：3.4V @ 15V, 20A
- Power - Max：190 W
- Switching Energy：2.1mJ (off)
- Input Type：Standard
- Gate Charge：72 nC
- Td (on/off) @ 25°C：25ns/150ns
- Test Condition：960V, 20A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247AD
- Grade：-
- Qualification：-
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Overview
The IXGH20N120B is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes GenX3™ technology and features a TO-247AD package for through-hole mounting. The device has a maximum collector-emitter voltage of 1.2 kV and a continuous collector current of 40 A at 25°C. Key electrical parameters include a saturation voltage of 3.5 V, power dissipation of 190 W, and a gate-emitter voltage range of -20 V to 20 V. It operates within a temperature range of -55°C to +150°C.
Feature Summary
- Utilizes IXYS GenX3™ trench IGBT technology for optimized switching performance.
- Features a robust TO-247AD through-hole package designed for high-power thermal management.
- Provides a square Reverse Bias Safe Operating Area (RBSOA) for reliable operation under short-circuit conditions.
Applications
- Motor drives and industrial automation systems
- Uninterruptible Power Supplies (UPS)
- High-frequency welding equipment
Procurement Notes
Verify the specific suffix or variant against the official datasheet to ensure compatibility with design requirements. Confirm that the TO-247AD package dimensions match the target PCB footprint. Check for any recent product change notifications regarding manufacturing updates or lead time adjustments from the supplier.
Selection Notes
Select this component for applications requiring 1.2 kV blocking capability and moderate current handling up to 40 A. The GenX3 technology offers a balance between low conduction losses and fast switching speeds. Ensure the thermal design supports the 190 W power dissipation rating within the specified junction temperature limits.
Part Context
This part belongs to the IXYS GenX3™ family of IGBTs, which are designed for medium-power applications. The series typically includes variants with different current ratings while maintaining similar voltage specifications and packaging options. These devices are widely used in power electronics where efficiency and reliability are critical.
Replacement Considerations
Direct substitutes may include other IXYS GenX3 devices with matching voltage and current ratings, such as the IXGH20N120B3D1, provided pinout and thermal characteristics are compatible. Cross-brand replacements require careful verification of Vce(sat), switching times, and package dimensions.
