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Product Detailed Parameters
- Description：IGBT 600V 40A TO-247AD
- Series：-
- Mfr：IXYS
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：40 A
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：-
- Power - Max：-
- Switching Energy：-
- Input Type：Standard
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247AD
- Grade：-
- Qualification：-
Download product information
Overview
The IXGH20N160 is an N-channel Insulated Gate Bipolar Transistor manufactured by IXYS. It features a maximum collector current of 40 A and a collector-emitter breakdown voltage of 600 V. The device is housed in a TO-247AD flange mount package with three terminals. Key electrical specifications include a maximum gate-emitter threshold voltage of 5 V and a maximum gate-emitter voltage of 20 V. The component supports a maximum operating temperature of 150 °C and complies with RoHS standards.
Feature Summary
- Utilizes IXYS XPT™ GenX5™ trench IGBT technology for optimized performance
- Features a square reverse bias safe operating area (RBSOA)
- Designed for high-efficiency switching applications with low on-state losses
Applications
- Motor drives
- Switched-mode power supplies
- Induction heating systems
Procurement Notes
Verify the specific manufacturer datasheet to confirm exact switching parameters and thermal characteristics, as these values can vary based on test conditions. Ensure that the procurement source provides original components with traceable documentation. Cross-reference the part number against official IXYS distribution channels to avoid counterfeit products. Confirm compliance with environmental regulations such as RoHS before finalizing orders.
Selection Notes
Select this component for applications requiring robust high-voltage switching capabilities within the 600 V range. The TO-247AD package facilitates efficient heat dissipation through direct mounting. Consider the 40 A continuous current rating when designing thermal management solutions. Evaluate the trade-off between switching speed and conduction losses inherent to the XPT technology for optimal system efficiency.
Part Context
The IXGH20N160 belongs to the IXYS IXGH series of insulated gate bipolar transistors. This series is characterized by the use of advanced trench gate and field stop technologies. These devices are engineered to provide superior performance in terms of switching losses and conduction voltage compared to conventional planar IGBTs. The series is widely used in industrial power conversion applications.
Replacement Considerations
Direct substitutes may include other IXYS models within the IXGH series with similar voltage and current ratings. Cross-manufacturer replacements require careful verification of pinout compatibility, thermal resistance, and electrical parameters such as Vce(sat) and switching times to ensure circuit functionality remains unaffected.
