ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IGBT 600V 40A TO-247AD
- Series：-
- Mfr：IXYS
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：40 A
- Current - Collector Pulsed (Icm)：80 A
- Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 20A
- Power - Max：150 W
- Switching Energy：1.5mJ (off)
- Input Type：Standard
- Gate Charge：100 nC
- Td (on/off) @ 25°C：100ns/600ns
- Test Condition：480V, 20A, 82Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247AD
- Grade：-
- Qualification：-
Download product information
Overview
The IXGH20N60 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a collector-emitter breakdown voltage of 600 V and a continuous collector current rating of 40 A at 25°C. The device utilizes a TO-247AD through-hole package with three terminals. Key electrical characteristics include a maximum gate-emitter voltage of ±20 V, a typical turn-off time of 600 ns, and a maximum power dissipation of 150 W. The component operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- High-voltage insulation capability for robust switching applications
- Through-hole mounting configuration for secure mechanical attachment
- Wide operating temperature range suitable for demanding environments
Applications
- Industrial motor drives
- Switch-mode power supplies
- Inverter circuits
Procurement Notes
Verify the exact suffix designation against official datasheets, as variations such as 'A' or 'BU1S' may exist within the product family. Confirm RoHS compliance status and specific pinout configurations prior to integration. Ensure the selected variant matches the required thermal and electrical specifications for the target application design.
Selection Notes
Select this component based on its 600V blocking voltage and 40A current handling capacity. Consider the TO-247AD package for adequate heat dissipation in high-power scenarios. Evaluate the switching speed and saturation voltage requirements against the specific circuit topology to ensure optimal efficiency and thermal performance under load conditions.
Part Context
This IGBT belongs to the IXYS discrete semiconductor portfolio, designed for medium-power switching applications. It serves as a fundamental building block in power electronics, offering reliable performance in converting and controlling electrical energy. The device is part of a broader series of insulated gate bipolar transistors utilized in various industrial and consumer electronic systems.
Replacement Considerations
Direct substitutes may include other 600V, 40A IGBTs in TO-247 packages from manufacturers like Infineon or STMicroelectronics. Verify pin compatibility, thermal resistance, and electrical parameters before substitution. Cross-reference with IXYS internal equivalents if available.
