IXGH20N60B

Overview

The IXGH20N60B is a HiPerFAST IGBT manufactured by IXYS. It features a collector-emitter breakdown voltage (Vces) of 600 V and a continuous collector current (Ic25) of 40 A at 25°C. The typical saturation voltage (Vce(sat)) is 1.7 V, with a typical fall time (tfi) of 100 ns. The device utilizes the HDMOSTM process and is housed in an international standard JEDEC TO-247 AD package.

Feature Summary

• Utilizes latest generation HDMOSTM process for high current handling capability
• Features MOS gate drive simplicity
• Designed for medium frequency switching applications

Applications

• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninterruptible power supplies (UPS)
• Switched-mode and resonant-mode power supplies

Procurement Notes

Verify the specific suffix against official datasheets to confirm pinout and thermal characteristics. Ensure the TO-247 AD package matches the target PCB footprint. Confirm RoHS compliance status through the manufacturer's current documentation before finalizing procurement specifications.

Selection Notes

Select this component for designs requiring 600 V blocking voltage and moderate current levels around 40 A. The 1.7 V saturation voltage offers a balance between conduction loss and switching speed. Consider the TO-247 AD package for through-hole mounting requirements in industrial power electronics.

Part Context

This part belongs to the IXYS HiPerFAST IGBT family, which integrates advanced trench gate technology. The series is engineered for efficiency in power conversion systems. The TO-247 AD package provides robust mechanical stability and thermal performance for discrete semiconductor applications.

Replacement Considerations

Check for direct cross-references within the IXYS portfolio. Verify that any substitute maintains identical voltage ratings, current capabilities, and package dimensions to ensure mechanical and electrical compatibility without redesign.