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The IXGH20N60BU1 is an N-channel Insulated Gate Bipolar Transistor (IGBT) from the HiPerFAST series, manufactured by IXYS. It features a collector-emitter breakdown voltage of 600 V and a continuous collector current rating of 40 A at 25°C. The device utilizes the HDMOSTM process for high current handling and includes a built-in fast recovery diode in the TO-247AD package.
Verify the specific suffix 'U1' against official IXYS documentation to confirm pinout and electrical characteristics, as variations exist within the 20N60B family. Ensure the component matches the required TO-247AD flange mount configuration. Cross-reference with Littelfuse data sheets if acquired through their distribution channels.
Select this component for circuits requiring integrated freewheeling diodes to save space. The 600V rating suits medium-voltage switching applications. Compare the 40A current capability against load requirements. Consider the thermal resistance of the TO-247AD package for heat dissipation planning in dense assemblies.
This part belongs to the IXYS HiPerFAST IGBT family, known for high efficiency and switching speed. The 'U1' suffix typically denotes specific packaging or variant details within the 20N60B product line. It is designed to replace older discrete IGBT-diode combinations in compact power electronics designs.
Direct substitutes include other 600V 40A HiPerFAST IGBTs with integrated diodes in TO-247 packages, such as the IXGH20N60BD1. Verify pin compatibility and saturation voltage before substitution.