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The IXYS IXGH24N170AH1 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage switching applications. It features a collector-emitter breakdown voltage of 1700 V and a continuous collector current rating of 24 A at 25°C. The device utilizes the XPT™ GenX5™ trench technology to optimize switching performance and conduction losses. It is housed in a TO-268AA surface-mount package, providing a maximum power dissipation of 250 W. The component operates within a junction temperature range of -55°C to 150°C.
Verify the specific suffix AH1 against the manufacturer's latest datasheet to confirm pinout compatibility and thermal specifications. Ensure the ordering documentation explicitly references the IXYS part number to avoid substitution errors with similar packages. Confirm RoHS compliance status through official channel documentation prior to final procurement authorization.
Select this component when a surface-mount IGBT with 1700 V blocking capability is required. The TO-268AA package facilitates automated assembly while maintaining robust thermal performance. Consider the 24 A continuous current rating relative to the expected load profile and available heatsinking infrastructure to ensure operation within the specified thermal limits.
This device belongs to the IXYS High Voltage IGBT series, specifically leveraging the XPT™ (Extended Plate Technology) architecture. This technology allows for higher voltage ratings without significant increases in saturation voltage. The IXGH24N170AH1 represents a surface-mount variant within the broader IXGH family, offering design flexibility for compact power electronics layouts.
Publicly confirmed substitute part numbers are not available in the provided source material. Verify cross-references directly with the manufacturer or authorized distributors before implementation.