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The IXYS IXGH24N60BU1 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) belonging to the HiPerFAST family. It features a collector-emitter breakdown voltage of 600 V and a continuous collector current rating of 24 A at 25°C, with a maximum saturated collector-emitter voltage of 2.3 V at 24 A. The device utilizes a TO-247 package for through-hole mounting and supports junction temperatures up to 150°C.
Verify the specific suffix 'BU1' against manufacturer documentation to confirm pinout configuration and internal diode characteristics. Cross-reference datasheets from Littelfuse or IXYS archives as ownership transitions may affect document availability. Ensure the component matches the required thermal resistance specifications for the target application.
Select this component when a 600V IGBT with moderate switching speed and low saturation voltage is required. Compare the gate charge and switching energy parameters against alternative devices in the same voltage class. Verify that the TO-247 package dimensions fit the PCB layout constraints and that the thermal management system can handle the specified power dissipation.
This part belongs to the IXYS HiPerFAST series, designed for high-efficiency power conversion. The numbering convention typically indicates the current rating and voltage class within the product line. Similar parts in the series include variants with different packaging or diode configurations.
Direct substitutes may include other 600V 24A HiPerFAST IGBTs in TO-247 packages. Verify electrical compatibility before substitution.