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The IXYS IXGH24N60C is a single N-channel MOSFET utilizing Silicon technology, housed in a TO-247AD-3 through-hole package. It features a drain-source breakdown voltage of 600 V and a continuous drain current of 56 A at 25°C. The device exhibits a maximum on-resistance of 2.28 V (likely referring to saturation voltage given the context of similar IGBTs, but listed as Rds On in source table) and operates within a temperature range of -55°C to +150°C. Power dissipation is rated at 250 W. The component is part of the IXGH24N60 series and carries the IXYS trademark.
Verify the specific revision suffix and manufacturing date code upon ordering, as the component status indicates it is obsolete or nearing end-of-life. Confirm availability with authorized distributors, as stock levels may be limited. Ensure that the TO-247AD-3 package dimensions match the target PCB footprint requirements before finalizing procurement plans.
Select this component when a 600V rating and approximately 56A continuous current capability are required in a TO-247 package. Consider the thermal management needs associated with its 250W power dissipation rating. Verify compatibility with gate drive voltages specified in the official datasheet. Compare against newer GenX3 or XPT series alternatives if higher efficiency or lower on-state losses are critical for the design.
The IXGH24N60C belongs to the IXGH24N60 series from IXYS, which focuses on medium-to-high power discrete semiconductors. This series typically targets applications requiring reliable switching performance in harsh environments. The TO-247AD-3 package is standard for high-current through-hole implementations, providing a balance between electrical performance and mechanical durability for industrial equipment.
Direct substitutes include IXXH30N60B3D1. Similar alternatives from other manufacturers include FGH40N60SMD-F085 and STGW40H65FB. Verify pinout compatibility and thermal characteristics before substitution.