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Product Detailed Parameters
- Description：IGBT 1000V 50A TO-247AD
- Series：-
- Mfr：IXYS
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：1000 V
- Current - Collector (Ic) (Max)：50 A
- Current - Collector Pulsed (Icm)：100 A
- Vce(on) (Max) @ Vge, Ic：3.5V @ 15V, 25A
- Power - Max：200 W
- Switching Energy：5mJ (off)
- Input Type：Standard
- Gate Charge：130 nC
- Td (on/off) @ 25°C：100ns/500ns
- Test Condition：800V, 25A, 33Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247AD
- Grade：-
- Qualification：-
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Overview
The IXGH25N100AU1 is a high-speed Insulated Gate Bipolar Transistor (IGBT) with an integrated anti-parallel Fast Recovery Epitaxial Diode (FRED). It utilizes the second-generation HDMOSTM process to achieve low saturation voltage for minimal conduction losses. The device operates in a JEDEC TO-247AD package, featuring a collector-emitter breakdown voltage of 1000V and a continuous collector current rating of 25A at 25°C.
Feature Summary
- Combines IGBT and anti-parallel FRED in a single package
- Utilizes second-generation HDMOSTM process technology
- Features soft recovery characteristics with low reverse recovery current
- Includes isolated mounting screw hole for easy installation
Applications
- AC motor speed control
- DC servo and robot drives
- Uninterruptible power supplies (UPS)
- Switch-mode and resonant-mode power supplies
Procurement Notes
Verify component authenticity through authorized channels as this part may be discontinued or subject to supply constraints. Confirm specific suffix designations against official datasheets to ensure correct electrical parameters and packaging options. Check for RoHS compliance status and REACH SVHC declarations prior to integration into final assemblies.
Selection Notes
Select this component for applications requiring high switching speeds and low on-state losses. The integrated diode simplifies circuit design by eliminating the need for external freewheeling diodes. Ensure thermal management strategies account for the specific power dissipation characteristics of the TO-247AD package under expected operating conditions.
Part Context
This device belongs to the IXYS IXGH series of high-speed IGBTs. It is designed for medium-power switching applications where efficiency and compactness are critical. The integration of the FRED diode allows for reduced board space and simplified assembly processes compared to discrete solutions.
Replacement Considerations
Direct replacements include IXGH25N100A. Verify pinout compatibility and electrical ratings before substitution. Consider thermal resistance differences when replacing with devices from other manufacturers.
