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The IXGH25N120A is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a maximum collector-emitter voltage of 1200 V and a continuous collector current of 50 A at 25°C. The device utilizes silicon technology and is housed in a TO-247AD-3 through-hole package with three pins. It operates within a temperature range of -55°C to +150°C, with a maximum junction temperature of 150°C. The gate-emitter voltage limits are specified between -20 V and +20 V.
Verify the component status carefully before procurement, as this part is marked as Not Recommended for New Designs (NRND). Confirm that existing inventory meets quality standards and check for potential supply chain constraints associated with end-of-life or legacy components. Ensure compatibility with current design requirements before finalizing orders.
Select this component for applications requiring 1200V blocking capability and moderate current handling in a standard through-hole format. Consider the NRND status when planning long-term production runs. Evaluate thermal management solutions suitable for the TO-247AD package to maintain safe operating temperatures under load conditions.
This IGBT belongs to the IXGH series from IXYS, which focuses on high-voltage power switching solutions. The TO-247AD package is a common industry standard for medium-power discrete semiconductors, facilitating easy mounting on heatsinks. The device represents a specific voltage and current rating within the broader portfolio of silicon-based power transistors.
Publicly confirmed substitute part numbers are not available in the provided documentation. Due to the NRND status, alternative sourcing should focus on verifying stock availability or consulting manufacturer recommendations for direct replacements.