IXGH25N160

Overview

The IXYS IXGH25N160 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage power switching applications. It features a maximum collector-emitter voltage (VCEO) of 1600 V and a continuous collector current (Ic) of 25 A at 25°C. The device utilizes the HDMOSTM process to achieve low saturation voltage, minimizing conduction losses. Key electrical parameters include a gate-emitter threshold voltage typically around 4.5 V and a maximum gate-emitter voltage rating of ±20 V. The component is housed in a TO-247AD package with through-hole mounting, supporting a maximum junction temperature of 150°C and a power dissipation capability suitable for industrial power conversion systems.

Feature Summary

• Integrated High-Density MOS (HDMOSTM) technology for optimized switching performance
• Low collector-emitter saturation voltage to reduce on-state conduction losses
• Robust TO-247AD insulated package facilitating easy thermal management and mounting

Applications

• AC motor speed control drives
• DC servo and robot drive systems
• Uninterruptible power supplies (UPS)
• Switch-mode and resonant-mode power supplies

Procurement Notes

Verify the specific suffix code against the manufacturer datasheet to confirm exact electrical tolerances and packaging variations. Ensure the supplier provides original manufacturer documentation to validate authenticity. Check RoHS compliance status if required by local regulations. Confirm lead times as production schedules may vary. Request batch-specific test reports for critical high-power applications.

Selection Notes

Select this component when a 1600 V blocking voltage is required alongside a 25 A continuous current rating. The low VCE(sat) characteristic makes it suitable for efficiency-critical designs where conduction loss reduction is prioritized. Ensure the gate driver can supply sufficient current to manage the input capacitance effectively. Verify that the thermal design accommodates the specified power dissipation limits under worst-case operating conditions.

Part Context

This part belongs to the IXYS IXGH series of high-speed IGBTs. It is engineered using second-generation HDMOSTM process technology. The series is widely recognized for combining fast switching speeds with low on-state voltage drops. It serves as a core switching element in medium-power industrial inverters and converters, offering a balance between performance and reliability in demanding electrical environments.

Replacement Considerations

Direct cross-replacement requires matching the 1600 V / 25 A specification and TO-247AD footprint. Compare key parameters such as VCE(sat), switching times (trr, tfi), and gate charge (Qg). Consult official substitution guides from IXYS or Littelfuse for validated alternatives within the same product family or equivalent offerings from other manufacturers.