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Product Detailed Parameters
- Description：IGBT 1400V 60A TO-247AD
- Series：GenX3™
- Mfr：IXYS
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：1400 V
- Current - Collector (Ic) (Max)：60 A
- Current - Collector Pulsed (Icm)：150 A
- Vce(on) (Max) @ Vge, Ic：3.6V @ 15V, 28A
- Power - Max：300 W
- Switching Energy：3.6mJ (on), 3.9mJ (off)
- Input Type：Standard
- Gate Charge：88 nC
- Td (on/off) @ 25°C：16ns/190ns
- Test Condition：960V, 28A, 5Ohm, 15V
- Reverse Recovery Time (trr)：350 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247AD
- Grade：-
- Qualification：-
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Overview
The IXGH28N140B3H1 is a GenX3 series N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features an integrated anti-parallel ultra-fast diode and is housed in a TO-247AD package for through-hole mounting. The device supports a maximum collector-emitter voltage of 1400 V and a continuous collector current of 28 A at 25°C. Key electrical parameters include a maximum power dissipation of 250 W, a gate-emitter voltage limit of ±20 V, and an operating temperature range from -55°C to +150°C.
Feature Summary
- Optimized for low conduction and switching losses
- Features an integrated anti-parallel ultra-fast diode
- Rated for avalanche operation with square RBSOA
Applications
- Power inverters
- Motor drives
- Uninterruptible Power Supplies (UPS)
- Switched-mode power supplies (SMPS)
Procurement Notes
Verify the specific suffix H1 against official datasheets to confirm pinout and thermal characteristics. Ensure compatibility with existing PCB footprints for the TO-247AD package. Confirm RoHS compliance status via the manufacturer's latest documentation before finalizing procurement orders.
Selection Notes
Select this component for high-voltage applications requiring integrated freewheeling capabilities. The 1400 V rating suits industrial systems where higher voltage margins are necessary. Evaluate thermal management requirements based on the 250 W power dissipation limit and ensure gate drive circuits support the specified voltage ranges.
Part Context
This part belongs to the IXYS GenX3 family, which utilizes trench gate technology to enhance performance. The GenX3 series is designed for high-efficiency power conversion, offering improved switching characteristics compared to older planar technologies while maintaining robust ruggedness in demanding environments.
Replacement Considerations
Direct substitutes within the same voltage and current class should be verified against the datasheet. Cross-referencing with other IXYS GenX3 variants or competitors' 1400V IGBTs with integrated diodes is recommended if availability is constrained.
