IXGH30N120B3

Overview

The IXYS IXGH30N120B3 is a single N-channel GenX3™ IGBT in a TO-247AD-3 package. It features a maximum collector-emitter voltage of 1.2 kV and a continuous collector current of 30 A at 25°C, with a peak pulsed current rating of 150 A. The device exhibits a maximum collector-emitter saturation voltage of 3.5 V and a gate-emitter leakage current of 100 nA. Power dissipation is rated at 300 W, operating within a junction temperature range of -55°C to +150°C.

Feature Summary

• GenX3 technology optimized for low conduction and switching losses
• Square Reverse Bias Safe Operating Area (RBSOA)
• International Standard Package compatibility

Applications

• Power Inverters
• UPS Systems
• Motor Drives
• SMPS PFC Circuits
• Welding Machines

Procurement Notes

Verify the specific suffix against official documentation to confirm pinout and thermal characteristics. Ensure the ordering part number matches the required package variant. Cross-reference datasheet revisions to validate electrical parameters before integration into final designs.

Selection Notes

Select this component for applications requiring high-voltage switching with moderate current capacity. The TO-247AD-3 package facilitates through-hole mounting for robust thermal management. Evaluate thermal resistance requirements against the 300 W power dissipation limit for the target operating environment.

Part Context

This device belongs to the IXYS GenX3 family of 1200V IGBTs. It shares architectural similarities with other models like the IXGA30N120B3 but utilizes a distinct TO-247AD-3 through-hole package instead of surface-mount options. This configuration supports higher mechanical stability in industrial environments.

Replacement Considerations

The IXGH30N120B3D1 is a documented alternative within the same series, offering identical electrical ratings in a D3PAK-3 surface-mount package. Verify footprint compatibility when substituting between these two variants.