IXGH30N120C3H1

Overview

The IXGH30N120C3H1 is a single silicon Insulated Gate Bipolar Transistor (IGBT) from the IXYS GenX3 series, housed in a TO-247AD-3 through-hole package. It features a maximum collector-emitter voltage of 1200 V and a continuous collector current of 30 A at 25°C. The device exhibits a typical collector-emitter saturation voltage of 2.6 V at 30 A and 15 V gate drive. With a power dissipation rating of 300 W and an operating temperature range from -55°C to +150°C, it utilizes XPT technology for optimized switching performance.

Feature Summary

• Utilizes IXYS GenX3 technology with XPT (Extra Punch Through) structure for low conduction losses
• Designed for high-speed switching applications in the 20 kHz to 50 kHz frequency range
• Features robust short-circuit capability and high thermal cycling stability

Applications

• High-frequency AC motor drives and servo amplifiers
• Induction heating and welding power supplies
• Uninterruptible Power Supplies (UPS) and resonant converters

Procurement Notes

Verify the specific suffix H1 against official IXYS documentation to confirm pinout configuration and electrical tolerances, as suffixes often denote manufacturing revisions or specific testing criteria. Ensure the component source is authorized to guarantee authenticity and traceability. Cross-reference the datasheet revision date with your design requirements to validate parameter consistency.

Selection Notes

Select this component when a balance between low saturation voltage and fast switching speed is required in a standard TO-247 package. Compare the 2.6 V Vce(sat) and switching energies against alternative IGBTs in the 1200V/30A class. Consider the thermal resistance characteristics for heatsink sizing in high-frequency operation scenarios.

Part Context

This part belongs to the IXYS IXGH30N120 family, which includes variants like IXGH30N120B3D1 and IXGH30N120C3D1. These devices share the same core GenX3 die but differ in packaging, suffix codes, and specific electrical test conditions. The C3/H1 designation typically relates to specific product line updates or regional compliance variations within the broader 1200V IGBT portfolio.

Replacement Considerations

Direct replacements include IXGH30N120B3D1 and IXGH30N120C3D1, provided the pinout and mechanical dimensions are identical. Verify that substitute parts meet the same switching energy and thermal specifications for equivalent circuit performance.