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The IXYS IXGH30N60B is a HiPerFAST IGBT designed for high-frequency power switching applications. It features a collector-emitter breakdown voltage (V_CES) of 600 V and a continuous collector current (I_C25) of 75 A at 25°C case temperature. The device exhibits a typical collector-emitter saturation voltage (V_CE(sat)) of 2.1 V and a fall time (t_fi) of 180 ns. Packaged in a TO-247AD through-hole housing, it supports junction temperatures up to 175°C and includes an insulated mounting hole for simplified installation.
Verify component authenticity by checking the manufacturer's marking code against official datasheet specifications. Confirm RoHS compliance status via the supplier's declaration. Ensure the TO-247AD package dimensions match the target PCB footprint before finalizing orders. Request batch-specific test reports if required for critical reliability standards.
Select this component when a 600V rating and approximately 75A continuous current capability are required. The 2.1V saturation voltage offers a balance between conduction loss and cost. Consider the 180ns fall time for switching frequencies typically below 20kHz. Evaluate thermal management requirements based on the 75A rating at 25°C case temperature.
This part belongs to the IXYS HiPerFAST family of IGBTs. It utilizes advanced MOS gate technology to reduce drive complexity while maintaining high current handling. The series is engineered for efficiency in industrial power conversion, offering improved performance over standard PT IGBTs in medium-frequency applications.
Direct substitutes include IXGH32N60B and IXGT30N60B. Verify pinout compatibility and thermal resistance values before substitution. Ensure the alternative device meets the same 600V blocking voltage and current handling requirements.