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The IXGH30N60BD1 is a HiPerFAST IGBT with an integrated diode manufactured by IXYS. It features a maximum collector current of 60 A and a collector-emitter voltage rating of 600 V. The device utilizes a TO-247AD flange mount package with three terminals. Key electrical parameters include a maximum fall time of 190 ns, a gate-emitter threshold voltage maximum of 5 V, and a gate-emitter maximum voltage of 20 V. The component is lead-free and RoHS compliant.
Verify the specific manufacturer source, as listings appear under both IXYS and Littelfuse due to corporate acquisition. Confirm the datasheet version matches the required electrical characteristics, particularly the fall time and saturation voltage values. Ensure the TO-247AD package dimensions align with the target PCB footprint and mounting hardware requirements before finalizing orders.
Select this component when a 600V rated IGBT with an integrated anti-parallel diode is required in a TO-247AD package. The 60A continuous current rating suits moderate-power applications. Compare the 190ns fall time against system switching frequency constraints. Verify that the 5V threshold voltage compatibility matches the available gate driver output levels for reliable turn-on operation.
This part belongs to the IXYS HiPerFAST family of insulated gate bipolar transistors. The suffix 'D1' indicates the inclusion of a built-in diode within the same package. The TO-247AD form factor provides a robust mechanical connection suitable for high-current industrial environments compared to standard through-hole variants.
Public records list the IXGT30N60BD1 as a related variant within the same manufacturer portfolio. Both parts share the 600V/60A ratings and TO-247AD package. Verify specific electrical parameter differences, such as switching speeds and saturation voltages, before substituting to ensure circuit compatibility.