IXGH32N60AU1

Overview

The IXGH32N60AU1 is a HiPerFAST IGBT with an integrated antiparallel FRED diode in a TO-247 AD package. It features a 600 V collector-emitter voltage rating and handles up to 60 A continuous collector current at 25°C, dropping to 32 A at 90°C case temperature. The device utilizes the 2nd generation HDMOSTM process for high frequency operation. Key electrical parameters include a maximum saturated collector-emitter voltage of 2.9 V at IC90 and a typical reverse recovery time of 150 ns for the diode. Thermal resistance from junction to case is specified at 0.62 K/W for the IGBT and 1 K/W for the diode.

Feature Summary

• Combines a high-frequency IGBT and an antiparallel FRED diode within a single component.
• Utilizes the 2nd generation HDMOSTM process technology for enhanced performance.
• Offers simplified MOS gate drive requirements for ease of integration.
• Provides high current handling capability suitable for demanding power applications.

Applications

• AC motor speed control systems
• DC servo and robot drives
• DC choppers
• Uninterruptible power supplies (UPS)
• Switched-mode and resonant-mode power supplies

Procurement Notes

Verify the specific suffix designation when ordering, as the datasheet distinguishes between the standard TO-247 AD through-hole version and the TO-247 SMD surface-mountable variant. Confirm that the selected part matches the required mounting style for your PCB or chassis design. Ensure thermal management solutions align with the specified junction-to-case thermal resistance values to maintain safe operating temperatures under load.

Selection Notes

Select this component for designs requiring both switching and freewheeling functions in a compact form factor. The TO-247 AD package allows for isolated mounting via a single screw, simplifying mechanical assembly. Consider the thermal derating curves if operating at elevated case temperatures, as the continuous current capacity decreases significantly above 25°C. Verify gate resistor values to manage switching speeds and minimize electromagnetic interference.

Part Context

This device belongs to the IXYS HiPerFAST family, which integrates fast recovery diodes with IGBTs to reduce system complexity. The product line targets high-efficiency power conversion applications where space and weight are critical constraints. The inclusion of the antiparallel diode eliminates the need for external components, thereby improving power density and reducing overall bill of materials costs.

Replacement Considerations

Check for direct pin-compatible alternatives within the IXYS portfolio that may offer updated manufacturing processes or different thermal characteristics. Ensure any substitute maintains the same 600 V blocking voltage and comparable saturation voltage levels to preserve circuit efficiency and reliability without redesigning the gate drive network.

FAQ

What is the difference between the IXGH32N60AU1 and IXGH32N60AU1S?

The primary difference lies in the package type. The IXGH32N60AU1 uses the standard TO-247 AD through-hole package, while the IXGH32N60AU1S utilizes the TO-247 SMD package designed for surface mounting.

How does the continuous collector current change with case temperature?

The continuous collector current is rated at 60 A when the case temperature is 25°C. This rating drops to 32 A when the case temperature increases to 90°C due to thermal limitations.

What is the typical reverse recovery time for the integrated diode?

The typical reverse recovery time (trr) for the antiparallel FRED diode is 150 ns when tested at a junction temperature of 125°C with a reverse voltage of 360 V.