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The IXGH32N60BU1 is a HiPerFAST IGBT with an integrated antiparallel Freely Recovering Diode (FRED) manufactured by IXYS. It utilizes the HDMOSTM process to combine high-frequency switching capabilities with high current handling in a single package. The device features a TO-247 insulated mounting screw hole for easy installation. Key electrical parameters include a collector-emitter voltage of 600V and a continuous collector current of 32A at 25°C. The saturation voltage is typically 1.8V, and the power dissipation capacity is rated at 250W. Operating temperatures range from -55°C to +150°C.
Verify the specific suffix 'U1' against official datasheets to confirm pinout and packaging variations. Check for end-of-life status or discontinuation notices as older HiPerFAST variants may have limited availability. Ensure compatibility with existing gate drive circuits regarding voltage thresholds.
Select this component when space constraints require combining a switch and diode in one footprint. The 600V rating suits medium-voltage industrial applications. Verify that the 32A continuous current meets the load requirements under expected thermal conditions. Consider the 1.8V saturation voltage for conduction loss calculations.
This part belongs to the IXYS HiPerFAST family, known for combining IGBTs and FREDs. The IXGH series specifically targets high-power density applications. The 'BU1' suffix indicates a specific package and terminal configuration variant within the broader 600V IGBT lineup.
Direct substitutes include IXGH32N60B and IXGH32N60AU1. Verify pin compatibility and thermal resistance values before substitution. Alternative manufacturers may offer similar TO-247 packages with comparable 600V/32A ratings.