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Product Detailed Parameters
- Description：IGBT 600V 60A TO-247AD
- Series：HiPerFAST™, Lightspeed™
- Mfr：IXYS
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：60 A
- Current - Collector Pulsed (Icm)：120 A
- Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 32A
- Power - Max：200 W
- Switching Energy：320µJ (off)
- Input Type：Standard
- Gate Charge：110 nC
- Td (on/off) @ 25°C：25ns/85ns
- Test Condition：480V, 32A, 4.7Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247AD
- Grade：-
- Qualification：-
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Overview
The IXGH32N60C is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a maximum collector-emitter voltage of 600 V and a continuous collector current rating of 32 A at 25 °C. The device utilizes the GenX3 technology platform and is housed in a TO-247AD-3 package with flange mount configuration. Key electrical parameters include a gate-emitter threshold voltage range of 3 V to 5 V, a maximum gate-emitter voltage of ±20 V, and a saturation voltage of 1.9 V at 32 A. The component operates within a junction temperature range of -55 °C to +150 °C.
Feature Summary
- GenX3 technology for optimized switching performance
- Low saturation voltage for reduced conduction losses
- Flange mount design for efficient thermal management
Applications
- Motor drive inverters
- Switched-mode power supplies
- Induction heating systems
Procurement Notes
Verify component authenticity through authorized IXYS distributors or certified secondary market suppliers. Request original manufacturer documentation and traceability records to confirm part integrity. Ensure storage conditions comply with semiconductor handling standards to prevent moisture damage prior to soldering.
Selection Notes
Select this component when a 600V IGBT with 32A continuous current capability is required. Verify that the application's thermal design can accommodate the TO-247AD-3 package dissipation characteristics. Confirm that the gate drive circuitry supports the specified threshold voltage range for reliable switching.
Part Context
This part belongs to the IXYS IXGH series of high-gain IGBTs based on GenX3 technology. It is designed for medium-power applications requiring robust switching performance. The TO-247AD-3 package provides a standardized form factor for mounting onto heatsinks in industrial power electronics assemblies.
Replacement Considerations
Direct replacements must match the 600V/32A rating and TO-247AD-3 footprint. Verify pinout compatibility and thermal resistance values. Cross-reference datasheets for saturation voltage and switching times to ensure equivalent circuit performance.
