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Product Detailed Parameters
- Description：IGBT 600V 70A TO-247AD
- Series：HiPerFAST™
- Mfr：IXYS
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：70 A
- Current - Collector Pulsed (Icm)：150 A
- Vce(on) (Max) @ Vge, Ic：1.55V @ 15V, 24A
- Power - Max：190 W
- Switching Energy：640µJ (off)
- Input Type：Standard
- Gate Charge：66 nC
- Td (on/off) @ 25°C：13ns/150ns
- Test Condition：400V, 24A, 5Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247AD
- Grade：-
- Qualification：-
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Overview
The IXYS IXGH34N60B2 is a HiPerFAST IGBT featuring a 600V collector-emitter breakdown voltage and a continuous collector current of 70A. It utilizes the GenX3 technology platform to achieve low saturation voltage and fast switching characteristics. The device is housed in a TO-247AD flange mount package, supporting a maximum power dissipation of 300W at 25°C. It operates within a junction temperature range of -55°C to 150°C.
Feature Summary
- GenX3 technology for optimized switching performance
- Low saturation voltage for reduced conduction losses
- High speed switching capability
- Robust thermal management via flange mount
Applications
- Motor drives and inverters
- Switched-mode power supplies (SMPS)
- Industrial motor control systems
- Uninterruptible power supplies (UPS)
Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and specific datasheet revisions prior to integration. Ensure storage conditions meet moisture sensitivity level requirements to maintain device reliability during assembly processes.
Selection Notes
Select this component for applications requiring high efficiency and fast switching at 600V levels. Evaluate thermal resistance parameters against system heat sink capabilities. Compare gate charge specifications with driver output strength to ensure optimal switching transitions and minimize switching losses.
Part Context
This part belongs to the IXYS GenX3 family of insulated gate bipolar transistors. The series is designed for medium-power applications demanding high reliability. It represents an evolution in silicon-based power switching technology, balancing voltage blocking capabilities with efficient current handling.
Replacement Considerations
Direct substitutes include IXGH40N60B2 and IXGP24N60C. Verify pinout compatibility and electrical parameter margins before substitution. Consult official replacement lists for updated availability and manufacturing changes.
