IXGH38N60

Overview

The IXGH38N60 is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a 600V collector-emitter voltage rating and a continuous collector current of 38A at 25°C. The device utilizes Ultra-Low VCE(sat) technology to minimize conduction losses. It is housed in a TO-247AD package designed for through-hole mounting, supporting a maximum power dissipation of 250W and an operating junction temperature range up to 150°C.

Feature Summary

• Ultra-Low VCE(sat) technology for reduced conduction losses
• Single IGBT configuration with high current handling capability
• Robust TO-247AD package optimized for thermal management

Applications

• High-frequency switching power supplies
• Motor drive inverters
• Induction heating systems

Procurement Notes

Verify the specific datasheet revision and electrical characteristics against the manufacturer's official documentation before integration. Confirm that the TO-247AD pinout matches the target PCB footprint. Ensure thermal interface materials are compatible with the specified power dissipation limits.

Selection Notes

Select this component for applications requiring low on-state voltage drop within a 600V system. Compare switching energy parameters against alternative models if high-speed operation is critical. Validate that the 38A continuous current rating meets the peak load requirements of the circuit design.

Part Context

This part belongs to the IXYS IXGH series of IGBTs, which are engineered for efficiency in medium-power electronic converters. The series emphasizes low saturation voltage to improve overall system performance in industrial and consumer electronics.

Replacement Considerations

Direct substitutes include the IXGH32N60AU1 and IXGH40N60C. Verify compatibility regarding package dimensions and thermal resistance when transitioning between these variants.