SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The IXYS IXGH39N60B is a single N-channel Insulated Gate Bipolar Transistor (IGBT) belonging to the HiPerFAST series. It utilizes silicon technology and features an electrically isolated backside design within a TO-247AD package for through-hole mounting. The device supports a maximum collector-emitter voltage of 600 V and a continuous collector current of 39 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 1.8 V, a gate-emitter voltage range of -20 V to +20 V, and a power dissipation rating of 250 W. It operates within a temperature range of -55°C to +150°C.
Verify component authenticity by checking manufacturer markings against official datasheet specifications. Confirm RoHS compliance status and specific ordering suffixes if required. Ensure the supplier provides valid traceability documentation. Cross-reference the part number with the latest Littelfuse or IXYS product announcements to confirm active manufacturing status.
Select this component for circuits requiring 600V blocking capability and moderate current handling up to 39A. The TO-247AD package facilitates effective heat sinking for high-power density designs. Consider the 1.8V saturation voltage when calculating conduction losses in the thermal design phase.
This IGBT is part of the IXYS HiPerFAST family, designed for general-purpose power switching. It shares the TO-247AD form factor with other devices in the series but offers specific current and voltage ratings tailored for industrial and consumer power electronics.
Direct substitutes may include the IXGH36N60B3 or IXGH40N60B, provided their electrical ratings meet or exceed the requirements of the original design.