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The IXGH40N120B2D1 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a 1200V collector-emitter breakdown voltage and a continuous collector current rating of 75A at 25°C. The device is housed in a TO-247 package with three pins, designed for through-hole mounting. Key electrical parameters include a collector-emitter saturation voltage of 2.9V and a maximum power dissipation of 380W. The component operates within a temperature range of -55°C to +150°C junction temperature.
Verify the specific datasheet version and RoHS compliance status directly with the manufacturer or authorized distributors before procurement. Ensure that the TO-247 package dimensions match your PCB footprint requirements. Confirm that the 75A current rating aligns with your system's thermal management capabilities and operating conditions.
Select this IGBT when a 1200V rating and 75A continuous current are required in a standard TO-247 form factor. Consider the 2.9V saturation voltage for conduction loss calculations. Evaluate the 380W power dissipation limit against your heatsinking solution. This component is appropriate for medium-to-high power switching applications where reliability and voltage withstand are critical.
This part belongs to IXYS' discrete semiconductor product line, specifically within the IGBT category. It represents a standard single-switch configuration commonly used in power electronics. The TO-247 package is widely recognized for its thermal efficiency and mechanical robustness in industrial environments.
Public confirmed substitute part numbers are not available in the provided documentation. Consult official cross-reference lists from IXYS or authorized distributors for potential alternatives.