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Product Detailed Parameters
- Description：IGBT 600V 75A TO-247AD
- Series：HiPerFAST™, Lightspeed™
- Mfr：IXYS
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：75 A
- Current - Collector Pulsed (Icm)：150 A
- Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 40A
- Power - Max：250 W
- Switching Energy：850µJ (off)
- Input Type：Standard
- Gate Charge：116 nC
- Td (on/off) @ 25°C：25ns/100ns
- Test Condition：480V, 40A, 4.7Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247AD
- Grade：-
- Qualification：-
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Overview
The IXYS IXGH40N60C is a single N-channel Insulated Gate Bipolar Transistor (IGBT) belonging to the HiPerFAST and Lightspeed series. It features a TO-247AD through-hole package with a maximum collector-emitter breakdown voltage of 600 V and a continuous collector current rating of 75 A. The device exhibits a maximum saturated collector-emitter voltage of 2.5 V at 40 A and 15 V gate drive. Key switching parameters include an off-state switching energy of 850 µJ, a gate charge of 116 nC, and turn-on/turn-off delays of 25 ns and 100 ns respectively, measured under specific test conditions. The component supports a junction temperature range from -55°C to 150°C and has a maximum power dissipation of 250 W.
Feature Summary
- HiPerFAST and Lightspeed series technology for optimized switching performance
- Standard input type compatible with common gate driver circuits
- Through-hole mounting in a robust TO-247AD package
Applications
Procurement Notes
Verify part status carefully as this component is listed as obsolete or not recommended for new designs. Confirm availability through authorized distributors or secondary markets. Ensure the source provides valid datasheets matching the exact suffix C. Check for RoHS compliance and environmental declarations if required by your manufacturing standards.
Selection Notes
Select this IGBT for applications requiring 600V blocking capability and up to 75A continuous current. Consider the 850 µJ switching energy when designing thermal management and snubber circuits. Compare against newer generations if lower switching losses are critical. Verify that the TO-247AD footprint fits your PCB layout constraints.
Part Context
This device is part of IXYS' discrete IGBT portfolio, specifically the HiPerFAST family designed for general-purpose switching applications. It shares the base part number structure with other variants in the IXGH40N60 series but differs in packaging and specific electrical characteristics compared to modules or different voltage ratings.
Replacement Considerations
Publicly confirmed substitutes include IXYH50N120C3, FGH40N60SMD-F085, and STGW40H65FB. Evaluate these alternatives based on voltage ratings, current capabilities, and package compatibility before implementation.
