IXGH45N120

Overview

The IXYS IXGH45N120 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) utilizing GenX3™ technology. It features a maximum collector-emitter voltage of 1200V and a continuous collector current of 75A at 25°C, with a pulsed current rating of 180A. The device is housed in a TO-247AD-3 package, offering a power dissipation capacity of 300W. It operates within a temperature range of -55°C to +150°C.

Feature Summary

• Utilizes IXYS GenX3™ trench gate technology for optimized switching performance.
• Features high current handling capability suitable for demanding power applications.
• Designed with International Standard JEDEC TO-247 AD packages for reliable mounting.

Applications

• High-voltage motor drives
• Induction heating systems
• Uninterruptible Power Supplies (UPS)

Procurement Notes

Verify the specific suffix designation against official datasheets to confirm exact electrical characteristics and thermal parameters. Ensure compatibility with standard TO-247AD mounting hardware. Confirm RoHS compliance status through manufacturer documentation prior to integration into final assemblies.

Selection Notes

Select this component for circuits requiring robust 1200V blocking capabilities and moderate continuous current levels. The TO-247AD package facilitates efficient heat dissipation for medium-power designs. Evaluate thermal resistance requirements against system constraints to ensure operation remains within the specified junction temperature limits.

Part Context

This discrete IGBT belongs to IXYS's GenX3 product family, which emphasizes low saturation voltage and fast switching speeds. It serves as a core switching element in power electronics, replacing older generation devices to improve efficiency in industrial converters and inverters.

Replacement Considerations

Direct substitutes include IXGH30N120B3D1 or IXGH48N60A3D1 depending on voltage and current requirements. Verify pinout compatibility and thermal interface specifications before substitution.