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The IXYS IXGH48N60B3 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) belonging to the GenX3 series. It utilizes silicon technology and is housed in a TO-247AD-3 through-hole package. The device features a maximum collector-emitter voltage of 600 V and a continuous collector current of 48 A at 25°C, with a pulsed current rating of 280 A. The saturation voltage is specified at 1.8 V. It operates within a junction temperature range of -55°C to +150°C and has a power dissipation capacity of 300 W.
This component is part of the IXYS GenX3 family of 600V IGBTs. It shares the same voltage class and packaging style as other models like the IXGH36N60B3 and IXGH56N60B3, differing primarily in current handling capabilities and specific switching characteristics defined by the manufacturer's datasheet.
Publicly confirmed direct substitute part numbers are not available in the provided documentation. Designers should consult official replacement guides or verify pin-compatible alternatives such as the IXGH48N60C3D1 based on specific electrical requirements.