IXGH4N250C

Overview

The IXYS IXGH4N250C is a single silicon Insulated Gate Bipolar Transistor (IGBT) housed in a TO-247 package. It features a maximum collector-emitter voltage of 2500 V and a continuous collector current of 13 A at 25°C. The device has a power dissipation rating of 150 W, with an operating temperature range from -55°C to +150°C.

Feature Summary

• High blocking voltage capability for demanding power applications
• Robust thermal performance within standard industrial temperature ranges
• Standard gate input configuration for straightforward driver integration

Applications

• High-voltage DC motor drives
• Industrial power supply inverters
• Resonant converter circuits

Procurement Notes

Verify the specific datasheet revision and electrical characteristics against the official IXYS documentation before implementation. Confirm that the TO-247 mounting requirements align with the target PCB or chassis design. Ensure thermal management solutions meet the specified power dissipation limits under actual operating conditions.

Selection Notes

Select this component when high voltage isolation and moderate current handling are required in a through-hole format. Compare saturation voltage and switching energy parameters against alternative devices to optimize efficiency. Evaluate thermal resistance specifications to ensure adequate heat sinking for the intended application environment.

Part Context

This IGBT belongs to the high-voltage discrete semiconductor category from IXYS. It utilizes silicon technology to provide reliable switching performance. The TO-247 package offers a balance of electrical isolation and thermal conductivity suitable for medium-power industrial electronics.

Replacement Considerations

Direct substitutes include other 2500V IGBTs in similar packages. Verify pinout compatibility and electrical ratings before swapping. Cross-reference with IXYS internal part numbers for potential newer generation equivalents.