IXGH50N120C3

Overview

The IXGH50N120C3 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS, belonging to the GenX3™ product series. It utilizes Silicon technology and is housed in a TO-247AD-3 package designed for through-hole mounting. The device features a maximum collector-emitter voltage (VCEO) of 1200 V and a continuous collector current (Ic) of 50 A at 25°C. Key electrical parameters include a maximum collector-emitter saturation voltage of 2.7 V, a gate-emitter leakage current of 100 nA, and a power dissipation rating of 400 W. The component operates within a temperature range from -55°C to +150°C.

Feature Summary

• Incorporates GenX3™ trench gate field-stop technology for optimized switching performance.
• Designed with enhanced ruggedness characteristics for reliable operation under short-circuit conditions.
• Features a standard three-terminal configuration suitable for high-power discrete applications.

Applications

• High-frequency power conversion systems
• Industrial motor drive inverters
• Uninterruptible Power Supply (UPS) units

Procurement Notes

Verify the specific manufacturer datasheet to confirm current production status and RoHS compliance details. Ensure that the ordering suffix matches the required packaging format, as variations may exist between tube and tape-and-reel configurations. Cross-reference the part number with official distributor catalogs to validate authenticity and technical specifications before procurement.

Selection Notes

Select this component for circuits requiring high voltage blocking capability combined with moderate current handling. The TO-247AD-3 package facilitates efficient thermal management via direct heatsink mounting. Evaluate the thermal resistance and saturation voltage against the system's power loss constraints to ensure the junction temperature remains within the specified operational limits during continuous duty cycles.

Part Context

This IGBT belongs to the IXGH50N120 family, which shares similar pinouts and mechanical dimensions but differs in voltage ratings or current capacities. It represents a discrete solution within IXYS's portfolio of high-voltage power semiconductors, distinct from integrated modules like the IXDN series. The GenX3™ branding indicates the use of advanced trench gate technology compared to earlier planar generations.

Replacement Considerations

Potential substitutes include the IXGH50N120B3D1 or IXGH50N60A, provided the voltage and current ratings align with the application requirements. Verify that any replacement maintains compatibility with the TO-247AD-3 footprint and electrical characteristics such as Vce(sat) and switching times.