IXGH60N60C3

Overview

The IXGH60N60C3 is a single N-channel Insulated Gate Bipolar Transistor manufactured by IXYS. It belongs to the GenX3 series and utilizes XPT (Extra Punch Through) technology. The device features a maximum collector-emitter voltage of 600 V and a continuous collector current of 60 A at 25°C. It operates within a junction temperature range of -55°C to +150°C. The component is housed in a TO-247AD-3 package with screw mounting capability.

Feature Summary

• GenX3 architecture providing high gain and low switching losses
• XPT technology for optimized trade-off between saturation voltage and switching speed
• Electrically isolated back surface design for enhanced thermal performance

Applications

• Switch-mode power supplies
• Resonant-mode power supplies
• AC motor speed control
• DC choppers

Procurement Notes

Verify the specific suffix C3 against official datasheets to confirm pinout and electrical characteristics match the target application. Check manufacturer notices for end-of-life status or alternative recommendations before finalizing procurement plans.

Selection Notes

Select this component for applications requiring medium-speed switching with low conduction losses. Ensure the gate drive circuit supports the required voltage levels and that the thermal management system can handle the specified power dissipation within the operating temperature limits.

Part Context

This part is part of IXYS's GenX3 family, designed for general-purpose power switching. It serves as an upgrade over previous generations with improved efficiency and ruggedness, suitable for industrial and consumer power electronics where space and thermal constraints are critical.

Replacement Considerations

Consider IXGH60N60B3 or IXGH60N60A3 from the same manufacturer for similar specifications. Verify compatibility with existing PCB layouts and thermal interfaces when substituting.