IXGH64N60B3

Overview

The IXYS IXGH64N60B3 is a GenX3™ 600V Insulated Gate Bipolar Transistor (IGBT) designed for medium-speed switching applications in the 5–40 kHz range. It utilizes Planar Trench technology to achieve low saturation voltage characteristics. The device features a maximum collector-emitter voltage of 600 V and a continuous collector current rating of 64 A at 25°C case temperature. Typical saturation voltage is limited to 1.8 V, with a typical fall time of 88 ns. Packaged in a TO-247AD-3 leaded housing, it supports junction temperatures up to 150°C.

Feature Summary

• GenX3™ planar trench technology for optimized performance
• Low saturation voltage design for reduced conduction losses
• Medium-speed switching capability suitable for 5–40 kHz operation

Applications

• High-frequency power inverters
• Motor drive systems
• Switching power supplies

Procurement Notes

Verify component authenticity through authorized Littelfuse or IXYS distribution channels. Confirm datasheet revision status and RoHS compliance documentation prior to integration. Ensure thermal management solutions align with the specified maximum junction temperature limits.

Selection Notes

Select this component for designs requiring robust 600V blocking capability combined with moderate current handling. Evaluate gate drive requirements against the specified fall time parameters. Ensure PCB layout accommodates the TO-247AD-3 package dimensions and thermal dissipation needs.

Part Context

This IGBT belongs to the IXYS GenX3 family, which integrates advanced trench gate technology with planar field-stop structures. This architecture distinguishes it from older parallel-planar devices by offering improved switching speed and lower on-state voltage drops within the 600V class.

Replacement Considerations

Direct pin-compatible replacements include the IXGT64N60B3 variant. Verify electrical parameter equivalence and package compatibility before substitution.