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The IXGK28N140B3H1 is a GenX3 series insulated gate bipolar transistor manufactured by IXYS. It features a 1400V collector-emitter voltage rating and a continuous collector current of 28A at 25°C. The device utilizes silicon technology with a single configuration and through-hole mounting style. Key electrical parameters include a maximum collector-emitter saturation voltage of 3.2V, a gate-emitter voltage range of -20V to +20V, and a power dissipation capacity of 275W. The component operates within a temperature range from -55°C to +150°C junction temperature.
Verify the specific suffix H1 against official datasheets to confirm pinout and thermal characteristics. Ensure compatibility with existing heatsinking requirements due to the TO-247AD package form factor. Cross-reference RoHS compliance status with current manufacturing notices before finalizing procurement orders.
Select this component for high-voltage applications requiring robust short-circuit withstand capability. The integrated fast recovery diode simplifies circuit design for inductive loads. Evaluate thermal resistance values against system cooling constraints to ensure reliable operation under peak load conditions.
This part belongs to the IXYS GenX3 family of IGBTs, designed for medium-frequency switching applications. The series emphasizes high power density and low gate drive requirements. It serves as a successor to earlier HiPerFAST generations, offering improved switching performance and ruggedness for industrial power electronics.
Direct substitutes may include other GenX3 1400V devices from IXYS such as the IXGH28N140B3H1. Verify pin compatibility and thermal specifications when considering cross-manufacturer alternatives like those from Infineon or Mitsubishi.