IXGK35N120BD1

Description：IGBT 1200V 70A TO-264
Series：HiPerFAST™

SKU:50f8b0a6c038 Category: Single IGBTs Brand: IXYS

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Product introduction

Product Detailed Parameters

Description：IGBT 1200V 70A TO-264
Series：HiPerFAST™
Mfr：IXYS
Package：Tube
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：70 A
Current - Collector Pulsed (Icm)：140 A
Vce(on) (Max) @ Vge, Ic：3.3V @ 15V, 35A
Power - Max：350 W
Switching Energy：3.8mJ (off)
Input Type：Standard
Gate Charge：170 nC
Td (on/off) @ 25°C：50ns/180ns
Test Condition：960V, 35A, 5Ohm, 15V
Reverse Recovery Time (trr)：60 ns
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-264-3, TO-264AA
Supplier Device Package：TO-264 (IXGK)
Grade：-
Qualification：-

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IXGK35N120BD1

Overview

The IXGK35N120BD1 is a high-voltage insulated gate bipolar transistor (IGBT) manufactured by IXYS. It features a single N-channel configuration housed in a TO-264-3 package designed for through-hole mounting. The device supports a maximum collector-emitter voltage of 1200 V and a continuous collector current of 35 A at 25°C. Key electrical parameters include a typical saturation voltage of 2.8 V, a turn-off time of 190 ns, and a power dissipation rating of 375 W. It operates within a temperature range of -55°C to +175°C.

Feature Summary

Integrated fast recovery anti-parallel diode for efficient commutation
Short-circuit safe operating area capability for robust protection
GenX3 technology optimized for low switching losses

Applications

AC motor speed control systems
DC servo and robot drives
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode power supplies

Procurement Notes

Verify the specific ordering suffix against the manufacturer's datasheet to confirm pinout and thermal characteristics. Ensure the component matches the required voltage and current ratings for the target circuit design before procurement.

Selection Notes

Select this component for applications requiring high voltage blocking and moderate current handling with integrated freewheeling diodes. Consider the thermal resistance and package size when designing heat sinks for the TO-264-3 housing.

Part Context

This part belongs to the IXYS GenX3 family of high-voltage IGBTs. It is engineered for industrial power conversion and motor drive applications where reliability and switching performance are critical requirements.

Replacement Considerations

Check for direct substitutes such as the IXSK35N120BD1 or IXGX35N120H1. Verify that any replacement maintains identical pin configurations and electrical specifications to ensure compatibility.