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Product Detailed Parameters
- Description：IGBT 1200V 70A TO-264
- Series：HiPerFAST™
- Mfr：IXYS
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：70 A
- Current - Collector Pulsed (Icm)：140 A
- Vce(on) (Max) @ Vge, Ic：4V @ 15V, 35A
- Power - Max：350 W
- Switching Energy：3mJ (off)
- Input Type：Standard
- Gate Charge：170 nC
- Td (on/off) @ 25°C：50ns/150ns
- Test Condition：960V, 35A, 5Ohm, 15V
- Reverse Recovery Time (trr)：60 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-264-3, TO-264AA
- Supplier Device Package：TO-264 (IXGK)
- Grade：-
- Qualification：-
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Overview
The IXGK35N120CD1 is a high-voltage Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features an integrated anti-parallel diode and belongs to the GenX3™ technology family utilizing XPT™ (Extended Plate Technology). The device is designed for high-power switching applications, offering robust short-circuit capability and optimized switching characteristics. Key electrical parameters include a collector-emitter breakdown voltage of 1200 V and a continuous collector current rating of 70 A. The component is housed in a TO-268-3 surface-mount package, suitable for automated assembly processes in industrial power electronics.
Feature Summary
- Integrated anti-parallel diode for simplified circuit design
- GenX3™ technology with XPT™ for optimized switching performance
- High short-circuit withstand capability for system protection
- Surface-mount TO-268-3 package for efficient thermal management
Applications
- AC motor speed control systems
- DC servo and robot drives
- Uninterruptible power supplies (UPS)
- Switch-mode and resonant-mode power supplies
Procurement Notes
Verify the specific suffix 'CD1' against official IXYS documentation to confirm pinout and thermal pad configuration. Check for active status or obsolescence notices as semiconductor lifecycles change. Ensure compatibility with existing PCB footprints and gate drive requirements before procurement.
Selection Notes
Select this component for applications requiring 1200V blocking voltage and high current handling in a surface-mount form factor. Compare switching losses and thermal resistance against through-hole alternatives if space constraints allow. Verify that the integrated diode reverse recovery characteristics meet the specific application's efficiency targets.
Part Context
This part is part of IXYS's high-voltage IGBT portfolio, leveraging GenX3™ technology. It serves as a discrete solution for medium-to-high power converters where compact packaging and high reliability are critical. It complements module-based solutions for lower power density requirements.
Replacement Considerations
Direct replacements may include other IXYS GenX3™ IGBTs with similar voltage and current ratings, such as the IXGT series. Verify pin compatibility and thermal specifications when substituting with devices from other manufacturers like Infineon or Mitsubishi.
