IXGK50N60A2U1

Description：IGBT 600V 75A TO-264
Series：-

SKU:5aaaffde0b9e Category: Single IGBTs Brand: IXYS

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Product introduction

Product Detailed Parameters

Description：IGBT 600V 75A TO-264
Series：-
Mfr：IXYS
Package：Tube
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：75 A
Current - Collector Pulsed (Icm)：200 A
Vce(on) (Max) @ Vge, Ic：1.6V @ 15V, 50A
Power - Max：400 W
Switching Energy：3.5mJ (off)
Input Type：Standard
Gate Charge：140 nC
Td (on/off) @ 25°C：20ns/410ns
Test Condition：480V, 50A, 5Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-264-3, TO-264AA
Supplier Device Package：TO-264 (IXGK)
Grade：-
Qualification：-

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IXGK50N60A2U1

Overview

The IXYS IXGK50N60A2U1 is a single-chip Insulated Gate Bipolar Transistor (IGBT) with an integrated anti-parallel Fast Recovery Epitaxial Diode (FRED). It features a 600 V collector-emitter breakdown voltage and supports a maximum continuous collector current of 75 A. The device utilizes TO-264 or PLUS247 packages for through-hole mounting, offering low on-state saturation voltage and high current handling capability within a compact form factor.

Feature Summary

Integrates a low saturation voltage IGBT and a low forward drop diode in a single package to reduce component count and space requirements.
Features MOS gate turn-on characteristics to simplify drive circuitry design.
Provides high current handling capability suitable for demanding power switching applications.

Applications

Lighting controls
Heating controls
AC/DC relays

Procurement Notes

Verify the specific package variant required, as the datasheet covers both TO-264 (IXGK) and PLUS247 (IXGX) configurations. Confirm that the ordering suffix matches the intended mechanical footprint before procurement. Ensure thermal management solutions align with the specified junction temperature limits and power dissipation ratings provided in the official documentation.

Selection Notes

Select this component when a combined switching and freewheeling function is needed in a single package. The integrated diode eliminates the need for external parallel components, simplifying layout. Consider the thermal resistance values and mounting torque specifications to ensure reliable operation under the expected load conditions and environmental temperatures.

Part Context

This part belongs to the IXYS HiperFast™ series of power semiconductors. It is designed for general-purpose power switching applications requiring robust performance. The integration of the IGBT and diode addresses space constraints in modern electronic designs while maintaining high efficiency and reliability standards typical of IXYS discrete power devices.