SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The IXGK50N60BU1 is a HiPerFAST IGBT with an integrated anti-parallel FRED diode, housed in a TO-264AA (JEDEC) package. It features a collector-emitter breakdown voltage of 600 V and a continuous collector current of 75 A at 25°C. The saturation voltage is 2.5 V at 50 A with a 15 V gate drive. Switching characteristics include a turn-off time of 120 ns and a reverse recovery time of 175 ns for the diode. Thermal resistance from junction to case is 0.42 K/W for the IGBT and 0.75 K/W for the diode. The device operates within a temperature range of -55°C to +150°C.
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status using official documentation. Check for specific ordering suffixes that may alter electrical parameters or packaging. Ensure storage conditions remain within specified limits to prevent degradation prior to assembly.
Select this component for designs requiring combined switching and freewheeling functions in a standard footprint. Evaluate thermal management based on the specified junction-to-case resistance values. Consider the 600V rating for appropriate voltage headroom in medium-power applications. Verify gate drive compatibility with the 15V recommended operating condition.
This part belongs to the IXYS HiPerFAST family of insulated gate bipolar transistors. It integrates a complementary diode to reduce board space and assembly complexity compared to discrete solutions. The TO-264AA package provides a robust mechanical interface for heat sinking while maintaining electrical isolation.
Direct substitutes include the IXGK50N50BU1, which shares identical packaging and pinout but offers a lower 500V rating. Other family members like the IXGH series offer similar performance in different packages such as TO-247AD.