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Product Detailed Parameters
- Description：IGBT 600V 40A TO-204AE
- Series：-
- Mfr：IXYS
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：40 A
- Current - Collector Pulsed (Icm)：80 A
- Vce(on) (Max) @ Vge, Ic：3V @ 15V, 20A
- Power - Max：150 W
- Switching Energy：2mJ (on), 2mJ (off)
- Input Type：Standard
- Gate Charge：120 nC
- Td (on/off) @ 25°C：100ns/600ns
- Test Condition：480V, 20A, 82Ohm, 15V
- Reverse Recovery Time (trr)：200 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-204AE
- Supplier Device Package：TO-204AE
- Grade：-
- Qualification：-
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Overview
The IXGM20N60A is a second-generation HiPerFAST IGBT manufactured by IXYS. It utilizes the HDMOS process to achieve low saturation voltage and high current handling capability. The device features a MOS gate structure for simple drive requirements and guarantees voltage rating at elevated temperatures up to 125°C. It is housed in an international standard package suitable for power electronics applications.
Feature Summary
- Second-generation HiPerFAST technology with HDMOS process
- Low VCE(sat) for reduced on-state conduction losses
- High current handling capability
- Voltage rating guaranteed at high temperature (125°C)
Applications
- AC motor speed control
- DC servo and robot drives
- Uninterruptible power supplies (UPS)
- Switch-mode and resonant-mode power supplies
Procurement Notes
Verify the specific datasheet version when sourcing, as manufacturing transitions between IXYS and Littelfuse may affect documentation availability. Confirm that the component matches the original II-VI High Power specifications if replacing legacy stock. Ensure the package type aligns with the intended thermal management design.
Selection Notes
Select this component for designs requiring robust high-temperature performance and simplified gate drive circuits. The low saturation voltage makes it efficient for medium-power switching applications. Consider the thermal resistance of the international standard package during heatsink selection to maintain reliability under continuous load conditions.
Part Context
This part belongs to the IXYS HiPerFAST family of insulated gate bipolar transistors. These devices are engineered for general-purpose power switching, combining the ease of MOS gate drive with the low conduction losses of bipolar technology. The series is widely used in industrial and consumer power conversion systems.
Replacement Considerations
Check for direct equivalents such as the IXGM40N60 or other HiPerFAST variants within the same voltage class. Verify pinout compatibility and thermal characteristics before substituting. Consult official cross-reference lists from IXYS or Littelfuse for confirmed replacements.
