IXGN100N120

$16.43

Description：IGBT MODULE 1200V 160A SOT227B
Series：-

SKU:6b381218492c Category: IGBT Modules Brand: IXYS

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Product introduction

Product Detailed Parameters

Description：IGBT MODULE 1200V 160A SOT227B
Series：-
Mfr：IXYS
Package：Tube
IGBT Type：-
Configuration：Single
Vce(on) (Max) @ Vge, Ic：-
Input：Standard
NTC Thermistor：No
Operating Temperature：-
Mounting Type：Chassis Mount
Package / Case：SOT-227-4, miniBLOC
Supplier Device Package：SOT-227B
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：160 A
Power - Max：-
Current - Collector Cutoff (Max)：-
Input Capacitance (Cies) @ Vce：-

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IXGN100N120

Overview

The IXGN100N120 is a silicon N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a maximum collector-emitter voltage of 1200V and a continuous collector current rating of 160A at 25°C. The device utilizes SOT-227B packaging for through-hole mounting, providing robust thermal performance with a power dissipation capacity of 830W. Key electrical characteristics include a typical saturation voltage of 2.4V and a gate-emitter voltage range of -20V to +20V. Designed for high-power industrial applications, it operates within a temperature range of -55°C to +150°C.

Feature Summary

High blocking voltage capability up to 1200V for demanding power switching environments
Robust 160A continuous current handling in a large through-hole package
Optimized low saturation voltage for improved conduction efficiency
Wide operating temperature range supporting extreme thermal conditions

Applications

Industrial motor drives and variable frequency drives
High-power DC-DC converters and inverters
Uninterruptible power supply (UPS) systems
Induction heating equipment

Procurement Notes

Verify the specific datasheet revision and testing conditions provided by the manufacturer before finalizing designs. Confirm that the SOT-227B footprint matches your PCB layout requirements. Ensure adequate heatsinking is designed to maintain junction temperatures within the specified limits during operation. Cross-reference part numbers carefully as suffixes may indicate variations in packaging or testing standards.

Selection Notes

Select this component when high voltage isolation and substantial current capacity are required in a through-hole configuration. Consider the thermal resistance of the SOT-227B package and the system's ability to dissipate 830W of heat. Evaluate the gate drive requirements against the specified voltage limits. Compare against alternative IGBT families if lower on-state losses or different packaging formats are needed for space constraints.

Part Context

This device belongs to IXYS's portfolio of high-power discrete semiconductors. It serves as a critical switching element in medium to high-power conversion stages. The SOT-227B form factor distinguishes it from smaller surface-mount alternatives, offering superior mechanical stability and thermal mass for heavy-duty industrial implementations where reliability under stress is paramount.