IXGN200N60

Overview

The IXGN200N60 is a HiPerFAST IGBT module in the SOT-227B (miniBLOC) package. It features a 600 V collector-emitter breakdown voltage and a continuous collector current of 200 A at 25°C case temperature. The device has a maximum saturated collector-emitter voltage of 2.5 V at 100 A and 15 V gate drive. It operates within a junction temperature range of -55°C to +150°C with a maximum power dissipation of 600 W.

Feature Summary

• Utilizes an aluminium nitride isolation layer for high power dissipation and electrical isolation.
• Features low package inductance below 5 nH to facilitate easy driving and protection.
• Includes a standard miniBLOC package compatible with ISOTOP mounting standards.
• Provides low collector-to-case capacitance under 50 pF.

Applications

• AC motor speed control
• DC servo and robot drives
• Uninterruptible power supplies (UPS)
• Switch-mode and resonant-mode power supplies

Procurement Notes

Verify the specific suffix against official datasheets, as variants like the IXGN200N60A exhibit different saturation voltages and switching characteristics. Confirm that the ordering code matches the required thermal resistance and voltage ratings for your circuit design before finalizing procurement.

Selection Notes

Select this component for applications requiring high current density and fast switching speeds. Ensure the gate resistor value aligns with the specified test conditions to achieve the rated turn-off times. Verify that the mounting torque meets the 1.5 Nm requirement to maintain proper thermal contact and mechanical stability.

Part Context

This part belongs to the IXYS HiPerFAST family of insulated gate bipolar transistors. It is designed for medium-frequency switching applications up to 40 kHz. The series emphasizes low on-state losses and robust short-circuit withstand capability for industrial power electronics.

Replacement Considerations

Direct replacements must match the SOT-227B footprint and 600V/200A ratings. Verify that alternative devices support the same 3000 Vrms isolation voltage and similar thermal resistance values to ensure compatibility with existing heatsink designs.