IXGN200N60B3

Overview

The IXGN200N60B3 is a single-channel Insulated Gate Bipolar Transistor (IGBT) module manufactured by IXYS, belonging to the XPT and GenX3 product series. It features a SOT-227-4 (Minibloc) package designed for baseplate mounting. The device supports a maximum collector-emitter voltage of 600 V and a continuous collector current of 280 A. Key electrical parameters include a maximum saturation voltage of 1.7 V at 15 V gate drive and 100 A collector current, with a maximum power dissipation of 940 W. The input capacitance is specified as 9.97 nF at 25 V, and it operates within a junction temperature range of -55°C to 175°C.

Feature Summary

• Utilizes XPT technology to achieve low saturation voltage characteristics.
• Incorporates GenX3 trench gate architecture for optimized switching performance.
• Designed for robust thermal management via baseplate mounting in a Minibloc package.

Applications

• High-power industrial motor drives
• Medium-frequency inverter circuits
• Switch-mode power supplies

Procurement Notes

Verify the specific datasheet version and manufacturer documentation to confirm exact electrical tolerances and mechanical dimensions before integration. Ensure that the sourcing channel provides authentic components from authorized distributors or direct manufacturer channels to avoid counterfeit products. Cross-reference the part number with official Littelfuse/IXYS catalogs for any recent design changes or obsolescence notices.

Selection Notes

Select this component for applications requiring high current handling capabilities up to 280 A with moderate switching speeds. The 600 V rating makes it suitable for standard three-phase AC bus voltages. Consider the thermal resistance and cooling requirements associated with the 940 W power dissipation limit when designing the heat sink interface for the SOT-227-4 package.

Part Context

This IGBT module is part of the IXYS IXGN series, which focuses on high-current power switching solutions. The series leverages advanced silicon planar trench technology to balance conduction losses and switching efficiency. It serves as a critical power semiconductor component in systems demanding reliable operation under high thermal and electrical stress conditions.

Replacement Considerations

Direct substitutes within the same family include the IXXK200N60B3, which shares similar voltage and current ratings but utilizes a TO-264-3 through-hole package instead of the Minibloc form factor. Verify pinout compatibility and thermal interface specifications when considering alternative packages from the same manufacturer.