IXGN50N60BD2

Overview

The IXGN50N60BD2 is a HiPerFAST IGBT with an integrated HiPerFRED diode, housed in the miniBLOC (SOT-227B) package. It features a collector-emitter voltage of 600 V and a continuous collector current of 75 A at 25°C. The saturation voltage is typically 2.5 V at 50 A. Key electrical parameters include a gate charge of 110 nC, turn-off time of 150 ns, and reverse recovery time of 35 ns for the diode. Thermal resistance from junction to case is 0.50 K/W for the IGBT and 0.85 K/W for the diode. The device operates within a junction temperature range of -40°C to +150°C.

Feature Summary

• Aluminium nitride isolation provides high power dissipation and 3000 V isolation voltage.
• Low package inductance below 10 nH facilitates easy driving and protection.
• Molding epoxies meet UL 94 V-0 flammability classification.

Applications

• AC motor speed control
• DC servo and robot drives
• DC choppers
• Buck converters

Procurement Notes

Verify the specific suffix BD2 against official datasheets to confirm pinout configuration, as variations exist within the family. Ensure thermal management designs account for the specified junction-to-case thermal resistance values under actual operating conditions. Confirm compliance with RoHS directives if required by the target application environment.

Selection Notes

Select this component for applications requiring high current density and fast switching in a standard international package. Consider the integrated FRED diode characteristics when designing buck or boost topologies. Evaluate gate resistor values to optimize switching losses versus electromagnetic interference, noting that performance varies with load current and temperature.

Part Context

This part belongs to the IXYS HiPerFAST IGBT series combined with HiPerFRED diodes. It utilizes the miniBLOC (SOT-227B) package, designed for high power density and ease of mounting using two screws. The technology targets efficient power conversion in industrial drive and converter systems.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with existing heatsinking and gate drive circuits before substituting with other IGBT modules from different manufacturers.

FAQ

What is the maximum isolation voltage of the module?

The module provides an isolation voltage of 3000 V due to its aluminium nitride isolation structure.

How does the package inductance affect performance?

The package inductance is less than 10 nH, which simplifies driving requirements and enhances protection capabilities during switching events.

What is the reverse recovery time of the integrated diode?

The reverse recovery time (trr) of the HiPerFRED diode is typically 35 ns under specified test conditions.